Electromigration Effect on Low Frequency Noise in Al Thin Films

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概要

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• The change in the noise spectrum was used to characterize the electromigration damage of aluminum thin-film resistors. The 1/f^2 noise spectrum was observed in the artificially stressed samples when the measurement current was flowing in the same direction as the stress current. However, when the same amount of measurement current flowed into the same sample from the other end, the sample showed a 1/f noise spectrum. The scanning electron microscope was used to analyze the damaged portion of the sample.

• 社団法人応用物理学会の論文
• 1991-04-15

著者

• Chen C.c.

  Dept. Of Electrical Engineering National Tsing Hua University

• LIOU D.M.

  Dept. of Electrical Engineering, National Tsing Hua University

• GONG J.

  Dept. of Electrical Engineering, National Tsing Hua University

• Liou D.m.

  Dept. Of Electrical Engineering National Tsing Hua University

• Gong J.

  Dept. Of Electrical Engineering National Tsing Hua University

関連論文

• Electromigration Effect on Low Frequency Noise in Al Thin Films

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