Preparation of TiN Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition

概要

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TiN film is used in the ultra large scale integrated circuit (ULSI) process as a diffusion barrier. Conventional TiN films arc deposited by reactive sputtering or by rapid thermal nitridation (RTN) of sputtered titanium layers. Our research group has developed a new ECR (electron cyclotron resonance) plasma CVD (chemical vapor deposition) system capable of depositing metal films. By using this system, TiN films were prepared using TiCl_4 and N_2 as material gases. It is proven that the films have many advantages: low resistivity, low stress, high barrier property, thick deposition on the bottom of the high aspect ratio's hole and low chlorine concentration in comparison with LPCVD (low pressure chemical vapor deposition) TiN film.
社団法人応用物理学会の論文
1991-12-30