A New Chemical Method of Preparing Semiconducting MoX_2 (X=S, Se) Thin Films
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概要
- 論文の詳細を見る
We report a new chemical method for preparing semiconducting MoX_2(X=S, Se) thin films on glass substrates. For MoS_2 deposition, an ammine complex of Mo (VI) ions, thioacetamide and hydrazine hydrate solutions was used, while for MoSe_2 films, sodium selenosulphate solution replaced thioacetamide, and other reagents remained unchanged. Structural, optical and electrical properties of the as-deposited and annealed films have been studied.
- 社団法人応用物理学会の論文
- 1991-12-15
著者
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Mandal Krishna
Departement De Metallurgie Et De Genie Des Materiaux
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SABADOGO Oumarou
Departement de metallurgie et de genie des materiaux