RHEED Investigation of the Au(001)-p(2×2)-As Structure Induced by the Deposition-Concurrent Surface Segregation of As
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概要
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We observed the p(2×2) structure on the surface of Au(001) during the epitaxial growth of Fe/Au multilayers on GaAs(001). This structure disappeared after removal of the segregated As atoms by sputter etching for a short period, and transformed to a hexagonal structure of the 5×1 type, the well-known surface reconstruction of the clean Au(001) surface. When the deposition of Au was conducted on sputter-etched clean surfaces of Fe(001), the surface structure was of the 5×1 type instead of p(2×2). These results show that the p(2×2) structure is induced by the surface segregation of As on Au surfaces during the deposition. The p(2×2) structure transformed to 1×1 after depositing less than 0.4 ML of Fe atoms. The correlation between the process of the deposition-concurrent surface segregation and the observed surface structure is discussed.
- 社団法人応用物理学会の論文
- 1991-11-15
著者
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Sano Ken-ichi
Research Institute For Metal Surfaces Of High Performance (rimes) Incorporated C
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Miyagawa Tsugio
O Technical Research Division
関連論文
- Surface Segregations during Epitaxial Growth of Fe/Au Multilayers on GaAs(001)
- RHEED Investigation of the Au(001)-p(2×2)-As Structure Induced by the Deposition-Concurrent Surface Segregation of As