Silver- and Gold-Related Deep Levels in Gallium Arsenide

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概要

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• Characterization of silver- and gold-related defects in gallium arsenide is carried out. These impurities were introduced during the thermal diffusion process and the related defects are characterized by deep-level transient spectroscopy and photoluminescence. The silver-related center in GaAs shows a 0.238 eV photoluminescence line corresponding to no-phonon transition, whereas its thermal ionization energy is found to be 0.426 eV. The thermal activation energy of thegold-related center in GaAs is 0.395 eV, but there is no corresponding luminescence signal.

• 社団法人応用物理学会の論文
• 1991-11-15

著者

• Pandian Velayuthan

  Indian Institute Of Science

• MOHAPATRA Yashowanta

  Indian Institute of Science

• KUMAR Vikram

  Indian Institute of Science

• Mohapatra Yashowanta

  Indian Institute Of Science:(present Address)department Of Physics Indian Institute Of Technology

関連論文

• Silver- and Gold-Related Deep Levels in Gallium Arsenide

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