Wet Chemical Etching Behavior of Ga(Al)As and In(Ga)P(As) Layers

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概要

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• The chemical etching behavior of Ga(Al)As and In(Ga)P(As) containing sandwich layers grown by metalorganic vapor phase epitaxy has been investigated using various etching solutions. The chemical background is described by a potential-pH diagram. Activation energies obtained were between 0.28 and 0.46 eV. The inclination angle of the etched walls is mainly 55°. In both the systems, a transition from a reaction-rate limited process to a diffusion-rate-limited one is observed. In InP, a reactive intermediate with an inclination angle of 45° could be trapped.

• 社団法人応用物理学会の論文
• 1991-11-15

著者

• Franz Gerhard

  Siemens Research Laboratories

• HOYLER Charlotte

  Siemens Research Laboratories

• SACHER Dagmar

  Siemens Research Laboratories

関連論文

• Wet Chemical Etching Behavior of Ga(Al)As and In(Ga)P(As) Layers

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