Effect of In Impurity on the Electrical Properties of Amorphous Se_<80>Te_<20>

概要

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Temperature and intensity dependence of photoconductivity (σ_<ph>) is studied in vacuum evaporated thin films of Se_<80>Te_<20-x>In_x where x=0, 0.5 and 10 with a view to determining the effect of In impurity on the photoconductive behaviour of a binary amorphous Se_<80>Te_<20> alloy. Temperature dependence of dark conductivity (σ_d) is also studied and it is observed that dark conductivity increases and activation energy decreases with the addition of In in binary Se_<80>Te_<20> alloy. σ_<ph> also increases upon In incorporation. However, photosensitivity (σ_<ph>/σ_d) decreases with an increase in In concentration. The results are explained in terms of the increase in the defect density on In incorporation in the Se_<80>Te_<20> binary system.
社団法人応用物理学会の論文
1990-02-20