Etching of InP by H_3PO_4, H_2O_2 Solutions

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概要

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• This paper deals with the chemical etching of (100) InP using a phosphoric acid and hydrogen peroxide mixture. It is shown that the etching rate is strongly dependent on the relative concentration of the two species; it is maximal for an equivolumic solution, and depending on the dilution it ranges from 70 to 20 Å/min. The activation energy of a non-diluted solution is approximately 14 kcal/mol. The post-etch surface state of the sample analysed by SEM and XPS, shows a very smooth surface for all concentrations, and the formation of a InPO_4・xH_2O layer. This solution can be used as a very precise etchant in devices processes.

• 社団法人応用物理学会の論文
• 1990-10-20

著者

• Currie J.

  Department De Genie Physique Ecole Polytechnique

• Mouton A.

  Department De Genie Physique Ecole Polytechnique

• SUNDARARAMAN C.

  Department de Genie Physique, Ecole Polytechnique

• LAFONTAINE H.

  Department de Genie Physique, Ecole Polytechnique

• POULIN S.

  Department de Genie Physique, Ecole Polytechnique

• Poulin S.

  Department De Genie Physique Ecole Polytechnique

• Lafontaine H.

  Department De Genie Physique Ecole Polytechnique

• Sundararaman C.

  Department De Genie Physique Ecole Polytechnique

関連論文

• Etching of InP by H_3PO_4, H_2O_2 Solutions

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