Transient Photoconductivity from the Steady State in Undoped Amorphous Silicon

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概要

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• In this study, experimental results of transient photoconductivity decay from the steady state in undoped amorphous silicon are presented. The results are explained within the framework of a theory of multiple trapping. It is found that the occupation function of electrons into the gap behaves as a quasi-Fermi distribution whose quasi-Fermi level moves from its steady-state position to the middle of the gap as time progresses. The rate equation for the free carrier density is numerically solved and compared with the experimental results. A good fit is obtained if one assumes the existence of a peak in the density of states.

• 社団法人応用物理学会の論文
• 1990-10-20

著者

• Mendoza D

  Univ. Nacional Autonoma De Mexico Mexico Mex

• MENDOZA Doroteo

  Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico Apartado Postal

• Mendoza Doroteo

  Instituto De Investigaciones En Materiales Universidad Nacional Autonoma De Mexico

関連論文

• Transient Photoconductivity from the Steady State in Undoped Amorphous Silicon
• Thin Films of C_ doped with Pb

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