The Melt Threshold of Silicon Irradiated by a Multi-Mode Argon Laser Beam

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概要

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• The laser beam of an Ar^+-laser used for the laser recrystallization of silicon-on-insulator material in a three-dimensional integration process can contain large contributions from higher transversal electro-magnetic (TEM) laser modes of which the doughnut shaped TEM_<01>*-mode is by far the most important one. An analytical expression is derived for the surface temperature of a bulk silicon wafer irradiated by a pseudo-stationary mixed-mode TEM_<00>-TEM_<01>* laser spot. The melt threshold of the irradiated wafer is determined as a function of the TEM_<01>*-mode contribution and as a function of the ratio of the laser power absorptance in the liquid to the laser power absorptance in the solid material. The influence of the TEM_<01>*-mode contribution on the size of the mixed solid-liquid 'slush'-zone is studied quantitatively.

• 社団法人応用物理学会の論文
• 1990-10-20

著者

• Willems G

  Interuniversity Microelectronics Center(imec) Leuven Bel

• Maes H.

  Interuniversity Microelectronics Center (imec)

• WILLEMS G.

  Interuniversity Microelectronics Center (IMEC)

関連論文

• The Melt Threshold of Silicon Irradiated by a Multi-Mode Argon Laser Beam

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