Study on the Light Scattering Mechanism at Precipitates on Dislocation Lines in an Indium Doped GaAs Crystal

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概要

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• The light intensities scattered from the precipitates on dislocations in an In-doped GaAs crystal were measured as a function of the temperature with three different frequencies of lasers. The scattered intensity showed a few peaks from 30 K to 260 K depending upon the wave length of the incident beams. The temperature dependence of resonance frequencies was obtained by Ogawa's resonance scattering model (R.S.M.) and compared with the experimental result.

• 社団法人応用物理学会の論文
• 1990-09-20

著者

• Sakai Kazufumi

  Depatment Of Physics Gakushuin University

• Ogawa Tomoya

  Depatment Of Physics Gakushuin University

関連論文

• Study on the Light Scattering Mechanism at Precipitates on Dislocation Lines in an Indium Doped GaAs Crystal

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