Molecular Field Analysis of Ce, Ga:DyIG Films

概要

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We report here the results of molecular field analysis of the temperature dependence of magnetization of Dy_2Ce_1Fe_<4.2>Ga_<0.8>O_<12> sputtered films that displayed large variations in compensation temperature due to different sputtering conditions. A three sublattice model was used to compute the molecular field coefficients and estimate the Ga and Fe^<2+> site distribution. The model accounted for the reduced moment of Fe^<2+>, known to be present due to the relatively high concentrations of tetravalent Ce measured in the films. Calculations show that upon an increase in the Ga tetrahedral site and Fe^<2+> octahedral site occupancies, as well as upon increasing the concentration of Ce^<3+>, large increases in the compensation temperature can be expected.
社団法人応用物理学会の論文
1990-09-20