Repair of Phase-Shift Masks Using Low Energy Focused Ion Beams

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概要

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• Focused Ga^+ ions in the energy range of 25 keV to 50 keV are commonly used to remove opaque defects in chromiumon-quartz photolithographic masks. The resulting implantation of the quartz causes staining and it is necessary to etch away the stained quartz. In a phase-shifting mask, this gives rise to unacceptable phase shifts. We have investigated the use of low energy focused ions and find that not only is the depth of staining significantly reduced but the loss of transmissivity (without etching) can be reduced to a negligible level (more than 90% transmissivity) for 500 eV Ga^+ ions. With well-designed ion optics such ions can be focused into a 0.3 μm diameter for 1 nA current.

• 社団法人応用物理学会の論文
• 1992-12-30

著者

• Pease R.

  Solid State Electronics Laboratory Stanford University

• LEE Hsiaowen

  Solid State Electronics Laboratory, Stanford University

• Lee Hsiaowen

  Solid State Electronics Laboratory Stanford University

関連論文

• Repair of Phase-Shift Masks Using Low Energy Focused Ion Beams
• Present and Future Trends in Microlithography

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