Two-Step Doping Using Excimer Laser in Boron Doping of Silicon

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概要

• 論文の詳細を見る

• A two-step doping method consisting of the deposition of dopant films and the incorporation of dopant atoms using excimer laser has been studied in boron doping of silicon. These processes are carried out in the same chamber successively. Sheet resistance can be varied widely by changing both the number and the energy density of the depositing laser pulses. In this method, dopants diffuse in the melted silicon from a fixed total dopant source with a simple Gaussian distribution when the number of melting pulses is small. The diffusion coefficient of B in liquid Si is determined experimentally.

• 社団法人応用物理学会の論文
• 1992-12-30

著者

• NII Takahiro

  Department of Electrical Engineering, Keio University

• Nii Takahiro

  Department Of Electrical Engineering Keio University

• AKANE Toshimitsu

  Department of Electrical Engineering, Keio University

• MATUMOTO Satoru

  Department of Electrical Engineering, Keio University

• Matumoto Satoru

  Department Of Electrical Engineering Keio University

• Akane Toshimitsu

  Department Of Electrical Engineering Keio University

関連論文

• Excimer Laser Doping of Boron into Silicon from Photodeposited Boron Films : Beam Induced Physics and Chemistry
• Two-Step Doping Using Excimer Laser in Boron Doping of Silicon

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