Improvement of Dry Etching Resistance of Cyclized Polybutadiene Negative Resist by Vacuum Baking

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概要

• 論文の詳細を見る

• The dry etching resistance of cyclized polybutadiene negative resist, baked both in air and in vacuum, was investigated. After postbaking in air at above l60℃, the resist etching rate sharply rises. It was clarified by differential scanning calorimetry (DSC), and Fourier transform infrared spectroscopy (FT-IR, RAS method) and X-ray photoelectron spectroscopy (XPS) that the resist oxidation decreases dry etching resistance. On the other hand, the highest resistance was obtained by baking the resist in vacuum at 200℃. The postbaking technique was confirmed as a method for increasing-dry etching resistance.

• 社団法人応用物理学会の論文
• 1992-12-30

著者

• Shimizu Toshio

  Manufacturing Engineering Research Center Toshiba Corporation

• CORNU Vanessa

  Ecole des Mines, Parc de Saurupt

• Cornu Vanessa

  Ecole Des Mines Parc De Saurupt

関連論文

• Improvement of Dry Etching Resistance of Cyclized Polybutadiene Negative Resist by Vacuum Baking

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