The Method of Measuring Optical Performance in KrF Excimer Lithography
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概要
- 論文の詳細を見る
The theoretical meaning of the ratio of top width to bottom width of a resist pattern (T/B) is explained by a simple model. In KrF excimer lithography, the positive photoresist, FH-EX1, is suitable for T/B evaluation. The method of measuring the optical performance of the projection optical systems using T/B is introduced. The response data of T/B for defocus, dose, the normalized spatial frequency and the illumination/projection condition are shown. In addition, with application of the result of the optimization of the illumination/projection corndition by T/B evaluation to the exposure of the chemical amplification resist, it is shown that sufficient depth of focus for 0.35 μm line and space patterns can be obtained.
- 社団法人応用物理学会の論文
- 1992-12-30
著者
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Suzuki Kazuaki
System Designing Section 1st Designing Department Industrial Supplies & Equipment Division Nikon
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MATSUM0TO Yukako
System Designing Section, 1st Designing Department, Industrial Supplies & Equipment Division, Nikon
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MURAYAMA Masayuki
System Designing Section, 1st Designing Department, Industrial Supplies & Equipment Division, Nikon
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Matsum0to Yukako
System Designing Section 1st Designing Department Industrial Supplies & Equipment Division Nikon
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Murayama Masayuki
System Designing Section 1st Designing Department Industrial Supplies & Equipment Division Nikon