Hall Coefficient and Oxygen Deficiency in BaPb_<0.7>Bi_<0.3>O_3 Single-Crystal Thin Films

概要

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The Hall coefficient and resistivity of single-crystal thin films of BaPb_<0.7>Bi_<0.3>O_<3-δ> are measured for various numbers of oxygen vacancies incorporated by successive oxygen reduction treatments. It is found that increasing the number of oxygen vacancies in this system causes a significant increase in resistivity and an abrupt depression of T_c. The Hall coefficient decreases with increasing number of oxygen vacancies, reflecting a significant decrease in the carrier density. These changes are also accompanied by a noticeable decrease in the Hall mobility. It is also found that the depression of T_c is proportional to the decrease in the Hall carrier density, showing a linear relationship between T_c and the carrier density. The effects of oxygen vacancies on the transport properties in conducting oxides are discussed in relation to the high-T_c cuprates.
社団法人応用物理学会の論文
1992-12-15