Defeating Compensation in Wide Gap Semiconductors by Growing in H that is Removed by Low Temperature De-Ionizing Radiation

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概要

• 論文の詳細を見る

• We propose a general method to obtain high conductivity of either type in wide gap semiconductors where compensation normally limits conductivity of one or both types. We suggest that the successes of Amano et al. and of Nakamura et al. in obtaining more than 10^<18> cm<-3> holes in GaN are particular examples of the general process that we propose.

• 社団法人応用物理学会の論文
• 1992-11-15

著者

• Goldenberg Barbara

  Sensor And System Development Center Honeywell Inc.

• VECHTEN James

  Center for Advanced Materials Research, Oregon State University

• ZOOK J.

  Sensor and System Development Center, Honeywell Inc.

• HORNING Robert

  Sensor and System Development Center, Honeywell Inc.

• Zook J.

  Sensor And System Development Center Honeywell Inc.

• Vechten James

  Center For Advanced Materials Research Oregon State University

• Horning Robert

  Sensor And System Development Center Honeywell Inc.

関連論文

• Defeating Compensation in Wide Gap Semiconductors by Growing in H that is Removed by Low Temperature De-Ionizing Radiation

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