Metal Complexes for Preparing Ferroelectric Thin Films by Metalorganic Chemical Vapor Deposition

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概要

• 論文の詳細を見る

• Recently, metal β-diketonato complexes have been used as a gas source for preparing ferroelectric thin films by metalorganic chemical vapor deposition (MOCVD). Since we have synthesized highly purified metal dipivaloylmethanato (DPM) complexes such as Pb(DPM)_2, Sr(DPM)_2 and Ba(DPM)_2 for ferroelectric thin films, we have investigated several properties of these chelate compounds related to depositing thin films. Their volatility and toxicity have also been investigated. As a result, it has been found that these chelate compounds have low vapor pressure, but present the advantages of easy handling because of the low toxicity and the possibility of forming thin films at lower temperature.

• 社団法人応用物理学会の論文
• 1992-09-30

著者

• Sawado Yoshinori

  Technology Division Nippon Sanso Corporation

• Tabuchi Toshiya

  Electronic Business Division Nippon Sanso Corporation

• Nakai Tomoaki

  Electronic Business Division Nippon Sanso Corporation

• Sugimori Yoshiaki

  Electronic Business Division Nippon Sanso Corporation

• KOBAYASHI Ichizo

  Electronic Business Division, Nippon Sanso Corporation

関連論文

• Metal Complexes for Preparing Ferroelectric Thin Films by Metalorganic Chemical Vapor Deposition

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