Preparation of PbTiO_3 Thin Films by Reactive Ionized Cluster Beam Deposition

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概要

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• PbTiO_3 thin films were prepared by reactive ionized cluster beam (R-ICB) deposition on highly (100)-oriented Pt films formed on SiO_2/Si substrates. PbTiO_3 thin films consisting of c-axis- and a-axis-oriented crystallines with perovskite structure were obtained at a comparatively low substrate temperature of 430℃. We think tensile stress exists in PbTiO_3 thin films, and it may be the cause of a-axis orientation. It is considered that fabricating high-density PbTiO_3 thin films by applying an acceleration voltage decreases the tensile stress in the film and is advantageous for preparation of c-axis-oriented PbTiO_3 thin films.

• 社団法人応用物理学会の論文
• 1992-09-30

著者

• Shibata Yoshitaka

  Takatsuki Laboratory Minolta Camera Co. Lid.

• HAYAMIZU Shunichi

  Takatsuki Laboratory, Minolta Camera Co., Lid.

• YAHASHI Akira

  Takatsuki Laboratory, Minolta Camera Co., Lid.

• Yahashi Akira

  Takatsuki Laboratory Minolta Camera Co. Lid.

• Hayamizu Shunichi

  Takatsuki Laboratory Minolta Camera Co. Lid.

関連論文

• Preparation of PbTiO_3 Thin Films by Reactive Ionized Cluster Beam Deposition

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