Donor-Acceptor Pair as Opposed to Anion Antisite Metastability in Bulk Semi-Insulating GaAs: Electron Paramagnetic Resonance and Photoconductivity Data Analysis

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概要

• 論文の詳細を見る

• We show that the time evolution of the paramagnetic signals and photoconductivity in the same semi-insulating GaAs material during illumination below the band gap at low temperature can both be analyzed within a charge transfer model. This model involves the formation of metastable donor-acceptor pairs due to free carrier trapping by initially ionized defects. This result again questions whether the common link between EL2 and the As_<Ga>-related defects needs a configuration-related metastability.

• 社団法人応用物理学会の論文
• 1992-09-15

著者

• Schwab C

  Lab. Physique Et Applications Des Semiconducteurs Cnrs Strasboung Fra

• BENCHIGUER Taha

  Centre de Recherches Nucleaires

• MARI Bernabe

  Centre de Recherches Nucleaires

• SCHWAB Claude

  Centre de Recherches Nucleaires

• DESNICA Uros

  R. Boskovic Institute

• Desnica U

  Rudjer Boskovic Inst. Zagreb Hrv

• Mari Bernabe

  Centre De Recherches Nucleaires:(present Address) Departament De Fisica Aplicada Universitat Politec

関連論文

• Electron Paramagnetic Resonance Studies of Defects in CdIn_2S_4 Single Crystals
• Dysonian Line in the Electron Spin Resonance of Highly Conductive CuIn_2S_4 Single Crystals
• Electron Spin Resonance Study of CuInSe_2 Single Crystals
• Donor-Acceptor Pair as Opposed to Anion Antisite Metastability in Bulk Semi-Insulating GaAs: Electron Paramagnetic Resonance and Photoconductivity Data Analysis

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