Improvement in the Sensitivity of PPMMA Electron Beam Resist by S and F Atom Doping

スポンサーリンク

概要

• 論文の詳細を見る

• The present work reports the deopendence of sensitivity of plasma polymerized methyl methacrylate (PPMMA) as electron beam resist on S and F atom concentration in the films. Plasma polymerization of MMA is carried out in an inductively coupled reactor at different deposition conditions with and without SF_6 doping. Ar is used as carried gas. The bonding characterization of the films is done by IR and X-ray photoelectron spectroscopy (XPS) techniques. XPS data taken on films, deposited under different deposition conditions, is used to estimate the S and F concentrations. The electron beam delineation is done using acanning electron microscope (SEM), modified for electron beam writing. The self development sensitivity of PPMMA films doped with S and F atoms is found to be 2-3 times improved compared to undoped PPMMA and is aldo dependent on deposition conditions.

• 社団法人応用物理学会の論文
• 1992-08-15

著者

• Gangal Shashikala

  Department Of Electronic-science University Of Poona

• Gorwadkar Sucheta

  Department Of Electronic-science University Of Poona

• ZAMBARE Madhukar

  Department of Electronic-Science, University of Poona

• GOSAVI Suresh

  Department of Electronic-Science, University of Poona

• KURUVILLA Beena

  Department of Physics, University of Poona

• KULKARNI Sulabha

  Department of Physics, University of Poona

• Kuruvilla Beena

  Department Of Physics University Of Poona

• Kulkarni Sulabha

  Department Of Physics University Of Poona

• Zambare Madhukar

  Department Of Electronic-science University Of Poona

• Gosavi Suresh

  Department Of Electronic-science University Of Poona

関連論文

• Improvement in the Sensitivity of PPMMA Electron Beam Resist by S and F Atom Doping
• Plasma-Polymerized Chlorinated α-Methylstyrene (PP-C-αMS) : A High Performance Negative Electron Resist

スポンサーリンク