Enhancement of Mobility in Pseudomorphic FET's with Up and Down Monolayers

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概要

• 論文の詳細を見る

• We have used molecular beam epitaxy (MBE) to grow single molecular layers (monolayers) in quantum wells in order to improve electron transport. The quantum well energy levels, wave functions, and the carrier concentrations are obtained by self-consistently solving the Schrodinger and Poisson equations. Photoluminescence (PL) and Hall measurements confirmed the energy level shifts and the mobility enhancement due to the monolayer insertions.

• 社団法人応用物理学会の論文
• 1992-07-15

著者

• Tehrani Saied

  Motorola Inc. Phoenix Corporate Research Lab

• Shen Jun

  Motorola Inc. Phoenix Corporate Research Lab

• GORONKIN Herb

  Motorola, Inc., Phoenix Corporate Research Lab

• DROOPAD Ravindranath

  Electrical Engineering Department, Arizona State University

• MARACAS George

  Electrical Engineering Department, Arizona State University

• LEGGE Ron

  Motorola, Inc., Phoenix Corporate Research Lab

• ZHU X.

  Motorola, Inc., Phoenix Corporate Research Lab

• Legge Ron

  Motorola Inc. Phoenix Corporate Research Lab

• Goronkin Herb

  Motorola Inc. Phoenix Corporate Research Lab

• Maracas George

  Electrical Engineering Department Arizona State University

• Droopad Ravindranath

  Electrical Engineering Department Arizona State University

• Zhu X.

  Motorola Inc. Phoenix Corporate Research Lab

関連論文

• Enhancement of Mobility in Pseudomorphic FET's with Up and Down Monolayers
• Spatially Selective Formation of InAs Self-organized Quantum Dots on Patterned GaAs (100) Substrates

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