Synthesis of Diamond Using Fe Catalysts by RF Plasma Chemical Vapor Deposition Method

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概要

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• Diamond growth was examined on a Fe/Si substrate in rf CH_4 plasma. The Fe film, evaporated on a Si wafer, promotes the growth of diamond. Although the density of the diamond particle grown on a Si substrate was on the order of 10^6cm^<-2>, the Fe film enhanced the density to an order of 10^7cm^<-2>. The particle size was increased with the increase in the Fe film thickness, and indicated a maximum value at around 500 Å. At an initial stage in the diamond growth, it was confirmed that C and Fe atoms diffused deeply into the Fe film and the Si substrate, respectively, which was confirmed by X-ray photoelectron spectroscope measurements. It was also observed that the diamond particles exist at the interface between the Fe film and Si substrate.

• 社団法人応用物理学会の論文
• 1992-06-30

著者

• Machi Yoshio

  Faculty Of Engineering Tokyo Denki University

• Shimada Yoshihito

  Faculty Of Engineering Tokyo Denki University

• MUTSUKURA Nobuki

  Faculty of Engineering, Tokyo Denki University

• Mutsukura N

  Faculty Of Engineering Tokyo Denki University

関連論文

• Synthesis of Diamond Using Fe Catalysts by RF Plasma Chemical Vapor Deposition Method

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