Plasma Etching of RuO_2 Thin Films

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概要

• 論文の詳細を見る

• Plasma etching of RuO_2 thin films was studied. It was shown that reactive ion etching employing CF_4 or O_2 plasma is effective in delineating RuO_2 fine patterns. The etching rate was 2 ∼ 5 times higher than that for sputter etching. A higher etching rate and good selectivity were achieved using O_2 plasma. This result can be explained by the difference in volatility of the respective reaction species.

• 社団法人応用物理学会の論文
• 1992-01-15

著者

• Kuramasu Keizaburo

  Products Development Center Matsushita Electronic Components Co. Lid.

• Saito Shinji

  Research Institute for Scientific Measurements, Tohoku University

• Saito Shinji

  Research And Development Laboratory Matsushita Electronic Components Co. Ltd.

関連論文

• Far-Infrared Reflectivity Spectra of the Hydrogen-Bonded Ferroelectric KH_2PO_4 Measured by Synchrotron Radiation
• Plasma Etching of RuO_2 Thin Films

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