Kinetics of Laser-Assisted Chemical Vapor Deposition of Tungsten Microstructures

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概要

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• Tungsten microstructures (dots, strips and films) have been deposited via H_2 reduction of WF_6 on polycrystalline silicon-coated quartz substrates irradiated with a focused cw argon laser beam. The deposition rate of W dots, deduced from α-step measurements of the height of dots, was investigated as a function of irradiation time, composition of H_2-WF_6 gas mixtures and laser-induced surface temperature. At a laser-induced surface temperature ranging from 340° to 670℃ with an H_2 partial pressure varying from 50 to 700 Torr, the reaction order with respect to H_2 was equal to one-half, whereas at higher temperatures (750°-950℃) and lower H_2 partial pressures (20-80 Torr), the reaction order with respect to H_2 was found to be one. The reaction mechanism of the H_2 reduction of WF_6 on substrates irradiated with the argon laser beam is discussed.

• 社団法人応用物理学会の論文
• 1992-01-15

著者

• Auvert Geoffroy

  Centre National D'etudes Des Telecommunications

• PAULEAU Yves

  Institut National Polytechnique de Grenoble

• TONNEAU Didier

  Societe Berin

• Pauleau Y

  Enseeg Saint Martin D'herea Fra

• Tonneau D

  Centre National De La Rech. Scientifique Meudon Fra

関連論文

• Kinetics of Laser-Assisted Chemical Vapor Deposition of Tungsten Microstructures

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