Polysilicon-Contacted Thin Emitter Thyristors
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概要
- 論文の詳細を見る
In this paper, we report detailed theoretical analysis of turn-off time and on-state voltage drop in the new type of polysilicon-contacted thin emitter thyristor, studied using the asymmetrical pin diode model and through comparis ons with conventional thyristors. The numerical calculations and experimental results showed that for a suitable thickness and total impurity amount of the thin emitter, not only can the turn-off time be shortened by a factor of around 1.5 compared with that of conventional thyristors, but also the on-state voltage drop of the devices is lower than that of conventional thyristors. When the lifetime of the minority carriers in the 72B base was decreased toa suitable value, the turn-off time of the devices could be further shortened, up to 1/2.5-1/3 that of conventional thyristors, without deterioration of the on-state properties. In addition, turn-on properties of the new devices are discussed.
- 社団法人応用物理学会の論文
- 1993-08-15
著者
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CHEN Tao
Department of Clinical Radiology, Graduate School of Medical Sciences, Kyushu University
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Yu Y
Shanghai Institute Of Ceramics Chinese Academy Of Sciences
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Chen T
Department Of Solid State Electronics Huctzhong University Of Science And Technology
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Chen Tao
Department Of Anatomy And K. K. Leung Brain Research Centre The Fourth Military Medical University
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XU Jingping
Department of Solid State Electronics, Huctzhong University of Science and Technology
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YU Yuehui
Department of Solid State Electronics, Huctzhong University of Science and Technology
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PENG Shaolian
Department of Solid State Electronics, Huctzhong University of Science and Technology
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Xu Jingping
Department Of Solid State Electronics Huctzhong University Of Science And Technology
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Peng Shaolian
Department Of Solid State Electronics Huctzhong University Of Science And Technology
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