Properties and Surface Morphology of Indium Tin Oxide Films Prepared by Electron Shower Method

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概要

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• Indium tin oxide (ITO) thin films were prepared by electron beam evaporation (EB) with an electron shower. Lawnlike and VLS (vapor-liquid-solid) whiskers of ITO were grown at 300℃ on the surface of the film with and without the electron shower, respectively. The electron resistivity of the ITO film fabricated with the electron shower was 4×10^<-4>Ω・cm, which was one order of magnitude smaller than that prepared by the EB at the same substrate temperature (300℃). The electron shower activated the oxidation of In and Sn, but the film was oxygen deficient. The increasing crystallization of the oxygen deficient ITO film was the cause of the decreasing resistivity.

• 社団法人応用物理学会の論文
• 1993-03-15

著者

• Hatano Jyun

  Faculty Of Industrial Science And Technology The Science University Of Tokyo

• Yumoto Hisami

  Faculty Of Industrial Science And Technology The Science University Of Tokyo

• Yumoto Hisami

  Faculty Of Industrial Science And Technology The Science Universiry Of Tokyo

• Sato Hironobu

  Sato Seigyo Co. Ltd.

• Fujikawa K

  Yamaguchi Univ. Ube Jpn

• WATANABE Tuneo

  Faculty of Industrial Science and Technology, The Science University of Tokyo

• FUJIKAWA Kazuhiro

  Faculty of Industrial Science and Technology, The Science University of Tokyo

• Watanabe Tuneo

  Faculty Of Industrial Science And Technology The Science University Of Tokyo

関連論文

• Deposition System for SEM "In Situ" Observation of Growing Crystals and the Preliminary Study of Zn Vapor Deposition
• Properties and Surface Morphology of Indium Tin Oxide Films Prepared by Electron Shower Method
• Physical Vapor Transport Process in Closed Tubes

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