Horizontal Zone-Melting of Indium Antimonide in Vacuum. : I. Basic Technique

概要

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A new approach has been developed to prepare high-purity InSb crystals; all processes, including synthesis of the compound and zone-melting procedures, were carried out in a vacuum evacuated continuously by a diffusion pump or by an ion pump. Details of the apparatus and zone-refining procedures are described, laying stress on the minimization of contamination from the possible source. n-type crystals with a carrier concentration range of 10^<13>-10^<14>/cm^3 were easily obtained, and the maximum mobility as 77 K was 8×10^5 cm^2/V・sec.
社団法人応用物理学会の論文
1979-02-05