Preparation and Growth of Single Crystals of Anthracene
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概要
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Single crystals of anthracene were grown from the melt following extensive purification efforts including liquid chromatography, sublimation and multiple zone refining in specially designed crystal growing tubes. Platelets cleaved from these crystals were tested for purity and perfecion by measuring carrier yields using the electron bombardment technique. In the best crystals, the electron and hole charge-carrier trappings at 323 K were completely abesent and the carrier yields equal. The values for the drift mobilities and their temperature coefficients agreed well with other published values. However, in a few crystal specimens the electron and hole yields were unequal, the latter being the larger, due to strong trapping of holes. These traps might be due to residual, analytically undetectable, inclusions of foreign aromatic hydrocar bons remaining in the lattice.
- 社団法人応用物理学会の論文
- 1978-06-05