Effects of Various Doping Elements on the Transition Temperature of Vanadium Oxide Semiconductors

概要

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It has been known that the transition temperature (Tc) of VO_2 is shifted by doping specified elements in VO_2. In order to shift Tc in still wider range, experiments have been performed with adding various elements. As a result, it has become possible to shift the Tc of VO_2 either towards a higher temperature or towards a lower temperature. The doping elements which shift Tc towards a higher temperature are Ti and Ge. Those which shift it towards a lower temperature are Fe, Co, Ni, Mo, Nb, and W. In the research conducted, it has been able to vary the Tc within the range of 0-90℃. As for the relationship between the Tc and the lattice constant of the crystals, there exists a correlation with the c_γ of the tetragonal phase of VO_2. Tc is nearly proportional to the quantity or c_γ the more the c_γ, the higher true Tc is; the less the c_γ,the lower the Tc is.
社団法人応用物理学会の論文
1969-08-05