C-V Characteristics of MOS Diodes Preparedby SiH_4-NO_2 System
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概要
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Prorerties at the Si-SiO_2 interface associated with vapor deposited SiO_2 films at low temperature were studied experimentally using the MOS diodes. SiO_2 films were deposited on the n-type silicon substrates by the reaction of SiH_4 with NO_2 at a temperature of 450℃. The effects of surface treatment of silicon substrate prior to deposition, substrate orientation, and electric stress in MOS diodes were examined, as well as the location of the surface states. The results indicate that the properties at the Si-SiO_2 interface of MOS diodes prepared by this method are different from those of MOS diodes obtained from thermally grown SiO_2 films, that is, no orientation dependence of the surface charge density was observed, and the surface treatments of substrate prior to deposition influenced remarkably on surface charge density. It was found that the surface treatments of silicon in an H_2O_2 solution and annealing in hydrogen after vapor etching with HCl are effective to obtain a smaller surface charge density. The surface state density is calculated from the the theoretical and experimental C-V (capacitance-voltage) curves measured at high frequency and discussed.
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- 1969-07-05