Thermoelecric Effect in Semiconducting Barium Titanate
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概要
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Thermoelectric measurements were carried out on polycrystalline semiconducting barium titanate systems. Doping elements used were erbium and terbium. The ambient temperature of the samples was varied from room temperature to 200℃. It was found that the thermoelectric power changes its sign beyond the transition temperature and becomes positive, even though the carrier concentration remains constant. A possible mechanism based on the idea of electron-phonon Umklapp process has been suggested to explain this reversal of sign.
- 社団法人応用物理学会の論文
- 1969-07-05