Superconducting Tunnelling in Metal-Semiconductor Junctions

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概要

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• Superconducting tunnelling effects were observed for mechanically contacted Nb-Si, Pb-Si, and Nb-GaAs junctions. The I-V curves of Nb-Si junctions largely deviate from the usual BCS curve. Deviations for Nb-GaAs and Pb-Si junctions are much smaller than that for a Nb-Si junction. This large deviation is explained by the uniformly distributed surface states on the boundary. The upper critical fields H_<c2> and H_<C3> of the junctions are much larger than those of a bulk niobium.

• 社団法人応用物理学会の論文
• 1969-05-05

著者

• Tsuda Nobuo

  The Institute For Solid State Physics The University Of Tokyo

関連論文

• Resistance Anomalies in Metal-Semiconductor Tunnel Junctions
• Superconducting Tunnelling in Metal-Semiconductor Junctions
• Angular Dependence of Superconducting Tunneling Effects in the Magnetic Field
• Superconducting Tunneling Effects in the Mixed State of Nb
• Tunneling Effects in Dirty-Superconductor : Semiconductor Junctions
• Superconducting Tunneling Effects in La, La:Ce and La:Gd

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