Defects Induced by Deep Diffusion of Phosphorus into Silicon

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概要

• 論文の詳細を見る

• Defects induced by diffusion of phospltorus in silicon have been found to develop to considerable distances beyond the diffusion front. The extension of dislocations into silicon has been found to depend on the surface treatment before diffusion. The X-ray diffraction topography has been used to study the structures and distribution of the lattice imperfections. When phosphorus is diffused in dislocation free silicon crystals, separated dislocation loops and precipitates as well as the ordinary dislocations are observed. Dislocation loops consist of hexagonal loops and disc shaped ones which have 1/3 <111> type Burgers vectors. The precipitate has an elastic strain with circular symmetry and may be considered to be phosphorus or phosphorus rich silicon. The mechanisms of the generation of these defects are briefly discussed.

• 社団法人応用物理学会の論文
• 1969-05-05

著者

• Yukimoto Yoshinori

  Research And Development Department Kitaitami Works Mitsubishi Electric Corporation

関連論文

• The Origin and Structures of the Anomalous Defects Observed in Silicon Crystals
• Defects Induced by Deep Diffusion of Phosphorus into Silicon

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