Pattern Washout Effect in Epitaxial Process of Integrated Circuit Fabrication

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In fabrication of silicon integrated circuits, epitaxial layers are usually grown by hydrogen reduction of SiCl_4, and the washout of buried layer patterns is occasionally observed after the epitaxial process. This paper describes a mechanism for pattern washout, based on experimental results of patterns depressed roughly 5,OOOÅ in depth. In the case of etching, the slanting face develops from a step to a depression, while in the case of deposition, it proceeds to a raise. The degree of pattern washout is nearly inversely proportional to orientational deviation of substrate surfaces from (111). Pattern washout is extremely slight in the case of epitaxial deposition by SiH_4. The model proposed for the mechanism of pattern washout is as follows; i) the (111) plane has an abrupt minimum rate in etching and deposition compared with surrounding planes and ii) occurrence of subsequent new (111) planes at steps results in the pattern washout.
社団法人応用物理学会の論文
1969-11-05