Preparation and Properties of BeO Thin Films

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概要

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• BeO thin films have been prepared by hydrolysis of BeCl_2 in the temperature range 690℃ to 1200℃, and studied by reflection electron diffraction. The films are found to be apt to take a fiber structure orientating c-axis vertically to the substrate. It has been observed that one of these films was epitaxially grown on single crystal Si substrate. The infrared spectra of orientated films have been studied in the range 400 cm^<-1> to 4000 cm^&l;t-1&g;ti. Comparing these spectra with that of BeO powder, a view about the assignment for BeO infrared spectra is given.

• 社団法人応用物理学会の論文
• 1969-10-05

著者

• Nagai Haruo

  The Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Thermodynamical Analysis for Vapor Growth of Ga_xIn_As Crystals
• Preparation and Properties of BeO Thin Films

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