Reduction of Recombination Velocity of Carriers at Si-SiO_2 Interface due to Heat Treatment in Hydrogen

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1969-01-05

著者

• Kawamura Nobuo

  Central Research Laboratories Nippon Electric Company Limited

関連論文

• Determination of Saturation Drift Velocity of Carrier in Semiconductors from Current-Voltage Characteristics in Space Charge Limited Range
• Crystal Anisotropy of Density of Surface States at S_i-S_iO_2 Interface
• The Electric and the Magnetic Field Dependence of Electrical Conductivity of n-Ge at Low Temperature
• Reduction of Recombination Velocity of Carriers at Si-SiO_2 Interface due to Heat Treatment in Hydrogen

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