Formation and Properties of Anodic Oxide Films on Indium Antimonide

概要

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The surfaces of the high purity n-type InSb were anodized in a KOH solution under the constant current conditions, and the electrical characteristics of the resultant oxide films were measured at room temperature at liquid nitrogen temperature. A new etching technique for indium antimonide is presented which gives a flat mirror-like surface prior to anodization. At liquid nitrogen temperature, the resistivity of the film is evaluated to be more than 10^<16>Ω-cm, and the breakdown voltage is 100 Volts/μm. The dielectric constant at 1 MHz is 11 for thin films, showing a little dependence on the thickness of the film. A transient behavior in the current-voltage characteristics of the film was observed at both temperatures.
社団法人応用物理学会の論文
1968-12-05