Photoelectric Properties of As_2Se_3 Layers

概要

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The photoelectric properties of As_2Se_3 evaporated layers were investigated on "sandwich" type photocell. Current-voltage characteristics and persistence of photoconduction were found to depend not only on the nature of anode contact material, but also on surface conditions of the anode contact as in the case of Al contact. The surface conditions are different depending upon whether an oxide layer is formed on the Al firm or not. Upward bend of photocurrent in the current-voltage curve is attributed to tunneling mechanism through the insulating oxide layer. Whereas in early models the persistence of photoconduction was attributed to the trapping effect in the bulk layer, the data obtained demand a model based upon the change of barrier from blocking action to injecting action under illumination and a strong electric field.
社団法人応用物理学会の論文
1967-07-05