Fast Linear Gate
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概要
- 論文の詳細を見る
A fast linear gate has been designed and its performance examined for simulated pulses similar to those from a photomultiplier anode. A pair of fast transistors functions as a gate by exchanging their bias voltages with a gating pulse. The amplification of the circuitry is almost linear up to about 11 mA input pulse. This ensures very fast response, good fidelity of pulse shape, low output impedance and a stable gain of around two. A pulse fed through the circuit without gate input is only 1.6% of the input pulse, and the gate pedestal at the output in the absence of input pulse is a transient pulse of less than 10 mV. These characteristics allow the circuit to satisfy the various requirements of nuclear experiments.
- 社団法人応用物理学会の論文
- 1967-06-05
著者
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Nishi Masato
Faculty Of Technology Hiroshima University
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Nishi Masato
Faculry Of Engineering Hiroshima University
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Ryu Norio
Faculty Of Technology Hiroshima University
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Ryu Norio
Faculty Of Engineering Hiroshima University
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