Spectral Emissivity of Silicon

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概要

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• The emissivity of silicon was observed in the spectral region from 0.4 to 15 μ at various temperatures from 340°K to 1070°K by using two n-type specimens with the resistivity of 15 ohm-cm and 7×10^<-3> ohm-cm at 300°K, respectively. The thermal radiation of silicon consists of three types due to band-to-band transition, free carriers and lattice vibration. It was made clear from the emissivity measurement that, in a pure specimen, the radiation due to lattice vibration is conspicuous at low temperatures, while that due to free carriers is predominant at higher temperatures, and that, in a doped specimen, the radiation due to free carriers is predominant even at low temperatures. The observed emissivity is close to the theoretical formula represented by the refractive index n and the extinction coefficient k. The temperature dependence of n and k is shown and a brief discussion is also added.

• 社団法人応用物理学会の論文
• 1967-03-15

著者

• Sato Tsutomu

  The Research Institute For Scientific Measurements Tohoku University

関連論文

• Spectral Emissivity of Silicon

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