Avalanche Breakdown Voltages of Selectively Diffused p-n Junction
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概要
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Voltage breakdown in a selectively diffused p-n junctions, differs from that for a planar junction due to the concentration of the field by its geometry. In this discussion, the breakdown voltage of the junction is related to diffusion condition parameters at first, the three-dimensional Fick's equation is solved to get the equation of junction geometry involving diffusion parameters; secondly, from this equation the predominant maximum curvature which effectively determines break-down voltage is calculated; and thirdly, the Poisson's equation for curved junction is solved to get the breakdown voltage-junction curvature relations. These analysis are made for 2 typical diffusion conditions, i.e. (i) instantaneous source and (ii) continuous source. Experimental verifications are made by using silicon for the former and germanium for the latter, and correspondence between calculated and measured breakdown voltage is satisfactory.
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- 1967-03-15