Some Properties of SiO_2 Films Deposited by the Reaction of SiH_4 with Water Vapor

概要

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SiO_2 films were deposited on the n-type Si substrates by the reaction of SiH_4 with water vapor in the temperature range 900°∼1200℃. The refractive index and etching rate with HF solution of SiO_2 films prepared at 900℃ were strongly dependent on the molar ratio of water vapor to SiH_4, but no shifts of the 9 micron absorption peaks by the stretching vibration of Si-O-Si bonds were observed among the films prepared at different molar ratios and at 900℃. These results indicate that Si atoms are included in these SiO_4 films. A capacitance-voltage hysteresis of the metal-oxide-silicon structure was observed and attributed to a phenomenon caused by the ionization of Si atoms in the SiO_4 films.
社団法人応用物理学会の論文
1967-10-05