Dislocation Etch Pits and Phase Stability on Single Crystal Tungsten Disilicide

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概要

• 論文の詳細を見る

• Spiral and hexahedral etch pits brought out dislocation loops on single crystal WSi_2 by etching with 8H_2O : 4HNO_3 : 1HF or 3H_2O : 1HNO_3. The dislocation density was calculated to be 2 × 10^8 dislocations/cm^2. Annealing at temperatures ranging from 1400° to 1800℃ decreased the number of dislocation loops present. Annealing of specimens at 1600℃ or above resulted in the formation of the second phase WSi_<0.7> as verified by x-ray and electron microprobe analyses. At 1800℃ the etch pits started to disappear which apparently is associated with the formation of the second phase.

• 社団法人応用物理学会の論文
• 1965-04-15

著者

• Lynch C.

  Air Force Materials Laboratory Wright-patterson Air Force Base

• VAHLDIEK F.

  Air Force Materials Laboratory Wright-Patterson Air Force Base

• MERSOL S.

  Air Force Materials Laboratory Wright-Patterson Air Force Base

• Mersol S.

  Air Force Materials Laboratory Wright-patterson

関連論文

• Dislocation Etch Pits and Phase Stability on Single Crystal Tungsten Disilicide
• Dislocation Etch Pits and Phase Relationships in Dimolybdenum Carbide Single Crystals

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