Quenched-in Vacancies in Zone-Refined Aluminum

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概要

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• The decay curves of quenched-in resistivity in zone-refined aluminum have been analyzed in detail to estimate the basic data of quenched-in vacancies. The results are as follows. The formation energy of a single vacancy is 0.77±0.02eV. The vacancy resistivity per unit concentration at room temperature is (2.5±0.8)×10^<-4>Ωcm, the activation energy of self0diffusion evaluated from the apparent activation energy in the second annealing stage is 1.48±0.02eV, the migration energies of a single vacancy and a divacancy are 0.71±0.04eV and 0.55±0.03eV, respectively, and the binding energy of a devacancy is 0.18±0.03eV. Finally, brief discussion is made on the vacancy sinks formed during ageing from the number of jumps necessary for a single vacancy or a divacancy to reach sinks.

• 社団法人応用物理学会の論文
• 1965-11-15

著者

• Kabemoto Satoru

  Laboratory Of Crystal Physics Faculty Of Science Hiroshima University

関連論文

• Scattering of Electrons by Stacking Faults in Aluminum
• Quenched-in Vacancies in Zone-Refined Aluminum

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