Imperfections in Silicon Induced by Diffusion of the Impurities
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概要
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The fact is shown by means of the chemical etching methods, that the imperfections occur in the peripheries of the diffusion portions in case the selective diffusion of a high concentration of boron or phosphorus is carried out in the silicon single crystal. It was found that in the case of boron, the imperfections occur when the surface concentration is 5×10^<19>cm^<-3> and the depth is more than 3μ, and in the case of phosphorus 1×10^<20>cm^<-3>, more than 3μ respectively. The same method has been applied to the double diffusion. In this case the imperfections were observed around the diffusion portions when the selective diffusion of a high concentration of the phosphorus was carried out while the surface concentration of the boron is less than 5×10^<19>cm^<-3>. However the imperfection was not observed when that of boron becomes more than 5×10^<19>cm^<-3>. It is necessary to consider the imperfections caused by the emitter diffusion on transistors.
- 社団法人応用物理学会の論文
- 1964-11-15