Undercutting Phenomena in Al Plasma Etching

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概要

• 論文の詳細を見る

• Undercutting phenomena in Al plasma etching were investigated. Photoresist, SiO_2 and Si_3N_4 were used for etching masks. PSG, Si(100), Si_3N_4 and Al_2O_3 were used for underlying layers. In various combinations of etching masks and underlying layers, only photoresist mask exhibits no undercutting. However, even in this case, undercutting occurs according to over-etching time and pattern density. An hypothesis that a film observed on an Al pattern sidewall acts as a protection against undercutting was proposed. Undercutting phenomena were easily explained by this hypothesis.

• 社団法人応用物理学会の論文
• 1980-07-05

著者

• Hirata Kazuo

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Oda Masatoshi

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Undercutting Phenomena in Al Plasma Etching
• MOS LSI Fabrication Process using Direct Electron Beam Writing : A-6: ELECTRON BEAM TECHNOLOGY

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