Quantitative Properties of SEM-EBIC Images of Stacking Faults in Silicon

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概要

• 論文の詳細を見る

• An analysis is given of recently reported quantitative evaluations of images of oxidation-induced stacking faults in (001) silicon, as obtained by the scanning electron microscope operating in the electron beam induced current mode. It is shown that experimental results can be accounted for on the basis of a model of contrast formation developed earlier, which assumes uniform generation over a sphere, purely diffusive transport and negligible bulk recombination of beam-injected minority carriers.

• 社団法人応用物理学会の論文
• 1980-12-05

著者

• Donolato Cesare

  Cnr-istituto Lamel

関連論文

• Quantitative Properties of SEM-EBIC Images of Stacking Faults in Silicon

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