Improvement in Intensity Fluctuation Noise of a 1 Gbit/s-Modulated InGaAsP Laser by a Light Injection Technique

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概要

• 論文の詳細を見る

• The effect of laser light injection on the mode spectrum and intensity fluctuation noise of an InGaAsP semiconductor laser modulated at 1 Gbit/s was studied. The power ratio of the injected mode to the total emitting mode was improved to 0.9, in comparison with 0.3 without injection. The intensity fluctuation noise in one longitudinal mode, caused by mode competition, was also reduced by 8 dB at 10 MHz, compared with systems without injection.

• 社団法人応用物理学会の論文
• 1980-11-05

著者

• Yamada Jun-ichi

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Machida Susumu

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Kimura Tatsuya

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• KOBAYASHI Soichi

  Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Kobayashi Soichi

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Improvement in Intensity Fluctuation Noise of a 1 Gbit/s-Modulated InGaAsP Laser by a Light Injection Technique

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